The measurement principle for the capacitance and loss angle tangent of dielectric ( Tan δ) of power capacitor used by a high-voltage SCHERING bridge and a high-voltage standard capacitor are introduced in detail. 详细说明了利用高压西林电桥和高压标准电容器测量电力电容器的电容和介质损耗角正切(Tanδ)的原理;扩大量程的途径及注意事项;
It is also indicated that the QS1 Schering bridge is not applicable for the said test and the use of converter bridges suggested; 并指出:QS1西林电桥不适于测试膜纸复合绝缘电容器的介质损耗因数,推荐采用变频电桥;
The temperature dependence of composites dielectric spectrum was verified by using a Schering bridge. 用西林电桥法测量了复合材料介电谱的温度特性,分析了纳米粒子含量对复合材料介电性能的影响。